Fabrication and Analysis of Poly-Si TFTs by Metal Induced Lateral Crystallization Technology
碩士 === 國立交通大學 === 電子工程系所 === 96 === In this thesis, we investigate the material and electrical properties of poly-Si TFTs prepared by metal induced lateral crystallization (MILC) process. The relations between MILC length and film thickness, process temperature, and the dimensions of MILC seeding wi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12803879806082460354 |