| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 96 === In this thesis, we investigate the material and electrical properties of poly-Si TFTs prepared by metal induced lateral crystallization (MILC) process. The relations between MILC length and film thickness, process temperature, and the dimensions of MILC seeding window were measured and discussed. The OM and SEM pictures after secco etching were used to probe the MILC length and film structure. Poly-Si TFTs fabricated by two kinds of MILC processes as well as SPC process were analyzed and compared. Characteristics of MILC TFTs with various dimensions were characterized to understand the impact of geometrical parameters of the device structure in affecting the device performance. We also employed a novel tester named HC-TFTs to resolve the location dependence and impact of the MILC poly-Si film on device characteristics. Finally, the characteristics of these TFTs, such as transfer characteristics, density of states (DOS), and the activation energy of leakage current (Ea), were also measured and discussed
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