Fabrication and Analysis of Poly-Si TFTs by Metal Induced Lateral Crystallization Technology

Fabrication and Analysis of Poly-Si TFTs by Metal Induced Lateral Crystallization Technology

碩士 === 國立交通大學 === 電子工程系所 === 96 === In this thesis, we investigate the material and electrical properties of poly-Si TFTs prepared by metal induced lateral crystallization (MILC) process. The relations between MILC length and film thickness, process temperature, and the dimensions of MILC seeding wi...

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Bibliographic Details
Main Authors:	Wei-Ming Wang, 王偉銘
Other Authors:	Horng-Chih Lin
Format:	Others
Language:	en_US
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/12803879806082460354

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