CMOS Class-E Power Amplifier Design for X-Band EER Transmitter
碩士 === 國立交通大學 === 電子工程系所 === 96 === A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-�慆 CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57091639625156808238 |