CMOS Class-E Power Amplifier Design for X-Band EER Transmitter

• Main Authors: Roger Randolph Wang, 王磊中
• Other Authors: Kuei-Ann Wen
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/57091639625156808238

碩士 === 國立交通大學 === 電子工程系所 === 96 === A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-�慆 CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power amplifier could achieve 17% power added efficiency (PAE) and delivering an output power of 10.75dBm with gain 20dB at 8.41 GHz. Also, the PAE is over 14% over the frequency range 8.35 GHz to 8.45 GHz. In order to improve the modulation accuracy of the proposed circuit under the EER transmitter, a compensation technique for AM/PM distortion is proposed to achieve the linearity requirements of IEEE 802.11a data stream broadband OFDM transmission. Simulation results show that with compensation technique, 20MHz signal bandwidth and 64-QAM modulation, the proposed Class-E power amplifier meet the linearity specification of IEEE 802.11a by achieving -25.2dB EVM while delivering 9 dBm averaging output power and 15% PAE at 8.4 GHz center frequency.