CMOS Class-E Power Amplifier Design for X-Band EER Transmitter
碩士 === 國立交通大學 === 電子工程系所 === 96 === A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-�慆 CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power...
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ndltd-TW-096NCTU54281652015-10-13T13:51:51Z http://ndltd.ncl.edu.tw/handle/57091639625156808238 CMOS Class-E Power Amplifier Design for X-Band EER Transmitter 應用於X頻帶EER發射器之互補金氧半E類功率放大器設計 Roger Randolph Wang 王磊中 碩士 國立交通大學 電子工程系所 96 A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-�慆 CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power amplifier could achieve 17% power added efficiency (PAE) and delivering an output power of 10.75dBm with gain 20dB at 8.41 GHz. Also, the PAE is over 14% over the frequency range 8.35 GHz to 8.45 GHz. In order to improve the modulation accuracy of the proposed circuit under the EER transmitter, a compensation technique for AM/PM distortion is proposed to achieve the linearity requirements of IEEE 802.11a data stream broadband OFDM transmission. Simulation results show that with compensation technique, 20MHz signal bandwidth and 64-QAM modulation, the proposed Class-E power amplifier meet the linearity specification of IEEE 802.11a by achieving -25.2dB EVM while delivering 9 dBm averaging output power and 15% PAE at 8.4 GHz center frequency. Kuei-Ann Wen Wen-Shen Wuen 溫瓌岸 溫文燊 2008 學位論文 ; thesis 65 en_US |
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碩士 === 國立交通大學 === 電子工程系所 === 96 === A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-�慆 CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power amplifier could achieve 17% power added efficiency (PAE) and delivering an output power of 10.75dBm with gain 20dB at 8.41 GHz. Also, the PAE is over 14% over the frequency range 8.35 GHz to 8.45 GHz. In order to improve the modulation accuracy of the proposed circuit under the EER transmitter, a compensation technique for AM/PM distortion is proposed to achieve the linearity requirements of IEEE 802.11a data stream broadband OFDM transmission. Simulation results show that with compensation technique, 20MHz signal bandwidth and 64-QAM modulation, the proposed Class-E power amplifier meet the linearity specification of IEEE 802.11a by achieving -25.2dB EVM while delivering 9 dBm averaging output power and 15% PAE at 8.4 GHz center frequency.
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Kuei-Ann Wen |
author_facet |
Kuei-Ann Wen Roger Randolph Wang 王磊中 |
author |
Roger Randolph Wang 王磊中 |
spellingShingle |
Roger Randolph Wang 王磊中 CMOS Class-E Power Amplifier Design for X-Band EER Transmitter |
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Roger Randolph Wang |
title |
CMOS Class-E Power Amplifier Design for X-Band EER Transmitter |
title_short |
CMOS Class-E Power Amplifier Design for X-Band EER Transmitter |
title_full |
CMOS Class-E Power Amplifier Design for X-Band EER Transmitter |
title_fullStr |
CMOS Class-E Power Amplifier Design for X-Band EER Transmitter |
title_full_unstemmed |
CMOS Class-E Power Amplifier Design for X-Band EER Transmitter |
title_sort |
cmos class-e power amplifier design for x-band eer transmitter |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/57091639625156808238 |
work_keys_str_mv |
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