Metal-HfTiO-Metal Capacitors for DRAM/RF Applications
碩士 === 國立交通大學 === 電子工程系所 === 96 === In this thesis, we adopted a hafnium titanate (HfTiO) film as MIM dielectric, which dopes HfO2 with large conduction band offset and wide bandgap into high-k TiO2 (k~50-80) to improve the performance of MIM capacitors for DRAM/RF applications. The attention of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20775352471226293687 |