Physics-Based Calculation of Hole Inversion-Layer Mobility in pMOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 96 === In pursuit of high integration density, high speed and low power consumption, complementary metal-oxide-semiconductor (CMOS) devices have been undergoing a progressive down-scaling strategy over the past few decades. The purpose of our study is to build a simple h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64107324604968183155 |