Physics-Based Calculation of Hole Inversion-Layer Mobility in pMOSFETs

• Main Authors: Ho-Nien Chien, 簡鶴年
• Other Authors: Ming-Jer Chen
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/64107324604968183155

碩士 === 國立交通大學 === 電子工程系所 === 96 === In pursuit of high integration density, high speed and low power consumption, complementary metal-oxide-semiconductor (CMOS) devices have been undergoing a progressive down-scaling strategy over the past few decades. The purpose of our study is to build a simple hole mobility model in the inversion layer of a p-type metal-oxide-semiconductor field effect transistor (pMOSFET) based on quantum device physics and compare the results with the experimental data on the so called universal curves. A detailed subband structure calculation is obtained by solving the one-dimensional Schrodinger and Poisson equations with a six-band k•p procedure. In our model, however, we have used a modified subband structure which is actually the solution of the eigenvalue problem in a 4×4 Luttinger-Kohn matrix. Besides, we have also used an equivalent effective mass model to derive the quantization-direction effective mass, the density-of-states effective mass, and the conductivity effective mass. Three scattering mechanisms are included in our model: acoustic phonon scattering, optical phonon scattering, and surface roughness scattering. Finally, we build a modified hole mobility model and compare the calculation results with Takagi’s data for various temperatures.