Strained Silicon Physics in Nanoscale MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 96 === In this work, by using the deformation potential theory for conduction band and the k•p framework (6 6 Luttinger Hamiltonian) for valence band, the strain-altered band structure (E-k relation), the strain-induced band edge shift, the constant energy surface, and t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44317602205044227873 |