Study on Fluorine Passivation Techniques and Strain Engineering for HfO2 Gate Dielectrics
博士 === 國立交通大學 === 電子物理系所 === 96 === First, we demonstrated several fluorine passivation technologies to fabricate high performance and highly reliable HfO2 gate dielectrics. Then, we investigated the current transportation and charge trapping mechanism of fluorinated HfO2 gate dielectrics. Finally,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h43hsg |