Epitaxial Lateral Overgrowth of GaN Thick Films on Porous Mask Fabricated by Ni Film Dewetting Phenomenon
碩士 === 國立交通大學 === 電子物理系所 === 96 === In this work, we propose a new process to fabricate porous SiO2 as epitaxial lateral overgrowth (ELOG) mask. Nanometer or micrometer scale porous Ni film formed by the dewetting of two-dimensional Ni film on SiO2 during rapid thermal annealing was investigated. Th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53135620724993465524 |