A study of Dry Etching process for InP backside vias
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 96 === The purpose of my studies is to investigate a proper backside process for 4 inches InP wafers and to do research of the dry etching mechanism of InP material. The result represents that there is 1.2 �慆/min high etching rate at the aspect ratio 2, for...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11469972802772784118 |