LPCVD BTBAS Silicon Nitride thin film for 65nm Transistor Sidewall Spacer Application

碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 96 === As the dimension of semiconductor device keep shrinking to nanometer generation, in order to achieve specific transistor performance and channel length, the manufacture of silicon nitride thin film which is used for sidewall spacer application is fac...

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Bibliographic Details
Main Author: 李捷弘
Other Authors: 吳耀銓
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/71537317714553414736