Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === We have integrated a Metal gate into Low temperature Poly-Silicon(LTPS) thin-film transistors (TFTs) with high-�n���n gate dielectric. We used Aluminum for metal gate, and we used HfLaO for high-k gate dielectric on LTPS. We got high drive current, low th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/543cp7 |