Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === We have integrated a Metal gate into Low temperature Poly-Silicon(LTPS) thin-film transistors (TFTs) with high-�n��n gate dielectric. We used Aluminum for metal gate, and we used HfLaO for high-k gate dielectric on LTPS. We got high drive current, low th...

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Bibliographic Details
Main Authors:	Chen-Yi Huang, 黃群懿
Other Authors:	Albert Chin
Format:	Others
Language:	en_US
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/543cp7

id	ndltd-TW-096NCTU5795007
record_format	oai_dc
spelling	ndltd-TW-096NCTU57950072019-05-15T19:48:25Z http://ndltd.ncl.edu.tw/handle/543cp7 Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric 低臨限電壓與高驅動電流之薄膜電晶體在金屬鋁與介電層氧化鑭鉿上之研究 Chen-Yi Huang 黃群懿碩士國立交通大學電機學院微電子奈米科技產業專班 96 We have integrated a Metal gate into Low temperature Poly-Silicon(LTPS) thin-film transistors (TFTs) with high-�n��n gate dielectric. We used Aluminum for metal gate, and we used HfLaO for high-k gate dielectric on LTPS. We got high drive current, low threshold voltage and low sub-threshold slop to improve the performance of device obviously. It also achieved high on/off ratio and high gate breakdown electric field. The excellent performances mentioned above are related closely to gate dielectric. We used HfLaO for high-k dielectric and it can product high density gate capacitor and less EOT. This kind of device is different from other common devices because it is not necessary to apply passive treatment or specific process of crystallization. We only used furnace to crystallize. Albert Chin 荊鳳德 2007 學位論文 ; thesis 73 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === We have integrated a Metal gate into Low temperature Poly-Silicon(LTPS) thin-film transistors (TFTs) with high-�n��n gate dielectric. We used Aluminum for metal gate, and we used HfLaO for high-k gate dielectric on LTPS. We got high drive current, low threshold voltage and low sub-threshold slop to improve the performance of device obviously. It also achieved high on/off ratio and high gate breakdown electric field. The excellent performances mentioned above are related closely to gate dielectric. We used HfLaO for high-k dielectric and it can product high density gate capacitor and less EOT. This kind of device is different from other common devices because it is not necessary to apply passive treatment or specific process of crystallization. We only used furnace to crystallize.
author2	Albert Chin
author_facet	Albert Chin Chen-Yi Huang 黃群懿
author	Chen-Yi Huang 黃群懿
spellingShingle	Chen-Yi Huang 黃群懿 Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
author_sort	Chen-Yi Huang
title	Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
title_short	Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
title_full	Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
title_fullStr	Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
title_full_unstemmed	Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric
title_sort	low threshold voltage and high drive current poly-silicon thin film transistors using aluminum metal gate and hflao dielectric
publishDate	2007
url	http://ndltd.ncl.edu.tw/handle/543cp7
work_keys_str_mv	AT chenyihuang lowthresholdvoltageandhighdrivecurrentpolysiliconthinfilmtransistorsusingaluminummetalgateandhflaodielectric AT huángqúnyì lowthresholdvoltageandhighdrivecurrentpolysiliconthinfilmtransistorsusingaluminummetalgateandhflaodielectric AT chenyihuang dīlínxiàndiànyāyǔgāoqūdòngdiànliúzhībáomódiànjīngtǐzàijīnshǔlǚyǔjièdiàncéngyǎnghuàlànjiāshàngzhīyánjiū AT huángqúnyì dīlínxiàndiànyāyǔgāoqūdòngdiànliúzhībáomódiànjīngtǐzàijīnshǔlǚyǔjièdiàncéngyǎnghuàlànjiāshàngzhīyánjiū
_version_	1719094743812538368

Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Aluminum Metal Gate and HfLaO Dielectric

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