Asymmetric-LDD MOS of SPDT Switch for Ultra Wideband 3.1~10.6GHz
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === The topic of research is T/R switch for ultra-wideband 3.1-10.6GHz application, it was designed by series-shunt topology. The circuit is fabricated in 0.18μm CMOS process. The higher drain breakdown voltage of asymmetric-LDD MOS transistor is used for the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9v652z |