Asymmetric-LDD MOS of SPDT Switch for Ultra Wideband 3.1~10.6GHz
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === The topic of research is T/R switch for ultra-wideband 3.1-10.6GHz application, it was designed by series-shunt topology. The circuit is fabricated in 0.18μm CMOS process. The higher drain breakdown voltage of asymmetric-LDD MOS transistor is used for the...
Main Authors: | Pei-Yu Lee, 李佩諭 |
---|---|
Other Authors: | Albert Chin |
Format: | Others |
Language: | en_US |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/9v652z |
Similar Items
-
3.1~10.6GHz Ultra-Wideband Of Low Noise Amplifier
by: 張宏嘉
Published: (2013) -
A CMOS LNA for 3.1-10.6GHz Ultra-Wideband
by: Shin-Yang Lin, et al.
Published: (2011) -
An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receivers
by: Yi-Fan Chen, et al.
Published: (2007) -
Study on 3.1~ 10.6 GHz Ultra-Wideband Receiver Front End
by: Ching-Ming Tseng, et al.
Published: (2006) -
Design and Implementation of 3.1-10.6GHz CMOS Ultra-Wideband LNA
by: Jen-How Lee, et al.
Published: (2007)