The effects of the plasma treatment and the annealing process on the thermal stability of HfO2 dielectrics
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === As CMOS devices are scaled aggressively into nanometer regime, SiO2 gate dielectric is approaching its physical and electrical limits. The primary issue is the intolerably huge leakage current caused by the direct tunneling of carriers through the ultrath...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35418233429430727355 |