Characteristics of Poly-Si Nanowire TFTs with Gate-All-Around
碩士 === 國立交通大學 === 奈米科技研究所 === 96 === This thesis successfully demonstrated gate-all-around polycrystalline silicon (poly-Si) thin film transistor with side-wall spacer nanowire technique. The poly-Si nanowire after solid phase crystallization for 24 hours was released to suspension from buried oxide...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47451115451883427765 |