Channel Extension Effect in Poly-Silicon TFTs with LDD Structure
碩士 === 國立交通大學 === 顯示科技研究所 === 96 === Polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied extensively for their application on system-on-panel (SOP) technology due to the high mobility. For actual applications, lightly-doped drain (LDD) structure is usually applied to poly-...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51879802224148647000 |