The Study of Antireflection Coating on Plastic Substrates by Reactive Sputtering

• Main Authors: Chih-hsiung Lin, 林志雄
• Other Authors: C. C. Lee
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/s39jmm

碩士 === 國立中央大學 === 光電科學研究所碩士在職專班 === 96 === The thesis uses plasma emission monitor system and dual cathode technology to conduct the process of oxide thin film sputtering process, and uses this process in the Roll to Roll plastic film sputter equipment, to control the exact amount of oxygen, and to get steady and high-quality oxide thin film. Through the control of the cathode power, oxygen flow, and roller run speed, continuous process of sputtering multi-layer optics film can be done. The result shows that the SiO2 of refractive index—when sputtering by the dual cathode technology—is 1.475081 in the wavelength of 550nm. It has an excellent quality to the sputtering process. During the sputtering process, the system can maintain the highest sputtering rate and prevent the target from being poisoned. The product of sputtering, ITO electricity-conducting optics film, has a refractive index of 1.992696 in the wavelength of 550nm and extinction coefficient is 0.018572. The experiment uses SiO2 and ITO to stack and sputter various kinds of optics films. The design of ITO/SiO2/ITO/PET can get an antireflection of ITO electricity-conducting film whose reflectance is less than 2%, transmittance is more than 92%, and sheet resistance is 500Ω/□. Combined with the material -thin metal Ag, the ITO/Ag/ITO/SiO2/PET design can get an ITO electricity- conducting film with a reflectance less than 2%, transmittance more than 85%, and sheet resistance is 3.2Ω/□. The four layer anti-reflection film SiO2/ITO/SiO2/ITO/PET design can get an antireflection and antistatic functions, and its reflectance is less than 0.6%, transmittance more than 93%, and sheet resistance is 3 X 107(Ω/□). Sputtering antireflection film uses the plastic material HC/TAC. The four layer antireflection film SiO2/ITO/SiO2/ITO/HC/TAC design can get an antireflection and antistatic film with reflectance of 0.4%, transmittance of more than 94%, and sheet resistance is 3 X 107(Ω/□).