Germanium quantum-dot single-hole transistors with self-aligned electrodes based on a bottom-gate technology
碩士 === 國立中央大學 === 電機工程研究所 === 96 === As CMOS technology is scaling into nanometer regime, the development of devices is towards small dimension, high speed, and low power consumption. Since single-electron (SE) device not only provide the aforementioned advantages but also could be applied to memory...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ux7e4n |