Small signal and noise model with scaling effect of pHEMTs

• Main Authors: Wen-yi Lin, 林文奕
• Other Authors: Yue-ming Hsin
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/46z3b9

碩士 === 國立中央大學 === 電機工程研究所 === 96 === GaAs pHEMT device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies. It is very important to set up an accurately model which contains the high frequency and noise characteristics. It is helpful to design a MMIC circuit composed of these transistors. This thesis contains both the small-signal and noise modeling methods of GaAs pHEMTs. Utilizing Yang-Long DC measurement and Cold-FET high frequency measurement method, extrinsic parameters of device can be extracted. And then using matrix operation method to obtain intrinsic parameters of the device, and set up the small-signal equivalent model of the transistor. Moreover, we use the noise correlation matrix method to extract noise coefficients of intrinsic noise sources. The equivalent noise model of the device with divinable noise characteristics can be established. This model can fit well to the measured data, including high frequency and noise characteristics. Finally, we discuss the scaling effect of the noise coefficients of intrinsic noise sources. The influence of the scaling effect on the noise coefficients is unobvious. Only the parameter P has the small deviation between the different sizes at the same current density.