Fabrication of Multilayer Ge Nanocrystal and Its Application in Floating-Dot MOS Capacitor
碩士 === 國立中央大學 === 電機工程研究所 === 96 === Abstract Since the Si will be preferentially oxidized during the high-temperature oxidation of SiGe alloy or annealing of SiGeO alloy and the segregated Ge atom will pile-up along the SiGe/SiO2 interface, it could be expected that the Ge nanocrystals would be te...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/z24zc4 |