characterization and Analysis of InGaASb Base Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 96 === This thesis reports the characterization of InxGa1-xAs1-ySby epilayers and InP/InxGa1-xAs1-ySby/InGaAs double heterojunction bipolar transistors (DHBTs) grown on InP by solid-source molecular beam Epitaxy. InxGa1-xAs1-ySby bulk layers of difference Sb content are...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/cth3s4 |