Selective Area Growth and Characterization of Gallium Nitride Semiconductors on Si by Metal-organicChemical Vapor Deposition
博士 === 國立中央大學 === 電機工程研究所 === 96 === This dissertation describes selective epitaxial growth techniques of GaN on c-face sapphire and microscale patterned Si substrates. The structural and optical properties of GaN films thus grown, particularly the reduction of dislocation density and residual stres...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56383995549829441953 |