Fabrication and Carrier Transport Mechanism of Nonvolatile Germanium Quantum Dots Imbedded in Oxide-Nitride Composite Tunnel Dielectric MOS-Capacitors
碩士 === 國立中央大學 === 電機工程研究所 === 96 === This article investigates the integration of multi-layer Ge QDs, high-K material, composite dielectrics and stair-case energy barrier for nonvolatile memory, and analyzes the advantages and disadvantages of the MOS-capacitors with these terms of charge storage, r...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tz3e88 |