Dissimilar Material Wafer Bonding - Silicon on Quartz THIM FILMSTRESSES SIMULATION and STUDY

• Main Authors: Jia-ching Lin, 林家慶
• Other Authors: Tien-hsi Lee
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/53119912168932309030

碩士 === 國立中央大學 === 機械工程研究所 === 96 === One of the characteristics of wafer bonding technology is joining different materials, therefore, it can provide possibility of integration to all kinds of wafer. The quartz and silicon bonded wafer can be widely used in MEMS, CCD and micro-display. But in the anneal step of the wafer bonging process, thermal stress will cause components instability or abnormality due to the large difference between the coefficient of thermal expansion on silicon wafer and quartz wafer. The abnormalities include circular bum or cave in shape deformity. Leading to conditions such as warping, rupture, separation or the wafer material. Due to above reasoning, the study will discuss how to use symmetry wafer bonding structure (quartz / silicon / quartz) to reduce the thickness of wafers to solve the coefficient of thermal expansion caused by heat. Under flat-panel mechanics theoretical framework, to analyze the mathematical structure and mechanical behavior of the behavior of thin film stress that causes the substrate bending and deformation is along with computer software, ANSYS, to establish a rational analysis model to provide numerical solution. That can examine the accuracy of mathematical models and using simulation software to find best use of the geometric bond and learning from observation of the key bond interface strength, film stress distribution relations. At the end, the changes of the parameters of the bond wafer to the stress and deformation and the theoretical value to verify the results is discussed.