Study of AlGaN Materials by Plasma Assisted Molecular Beam Epitaxy
碩士 === 國立彰化師範大學 === 物理學系 === 96 === In this thesis, the growth conditions of ternary AlGaN materials were investigated. AlGaN materials are composed of GaN and AlN and their growth conditions should also lie somewhere between GaN and AlN. Therefore, the growth conditions of GaN, AlN and AlN buffer l...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/63061953016825728923 |