Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
碩士 === 國立彰化師範大學 === 電子工程學系 === 96 === GaN layers has been grown on Si(111) by plasma-assisted molecular beam epitaxy. The effect of thickness, growth rate and III/V ratio of high temperature AlN buffer layer on the GaN samples was investigated. Surface morphology is characterized by scanning electro...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33827701237418119898 |