Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
碩士 === 國立彰化師範大學 === 電子工程學系 === 96 === GaN layers has been grown on Si(111) by plasma-assisted molecular beam epitaxy. The effect of thickness, growth rate and III/V ratio of high temperature AlN buffer layer on the GaN samples was investigated. Surface morphology is characterized by scanning electro...
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| Format: | Others |
| Language: | zh-TW |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33827701237418119898 |
| Summary: | 碩士 === 國立彰化師範大學 === 電子工程學系 === 96 === GaN layers has been grown on Si(111) by plasma-assisted molecular beam epitaxy. The effect of thickness, growth rate and III/V ratio of high temperature AlN buffer layer on the GaN samples was investigated. Surface morphology is characterized by scanning electron microscopy and atomic force microscopy. Crystal quality is assessed by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM). Optical properties are measured by photoluminescence. From the analysis of plan-view TEM, the total dislocation density reduces from 5.28×1010 cm-2 to 3.20×1010 cm-2 when buffer layer growth rate is reduced from 250 nm/hr to 100 nm/hr. HRXRD analysis shows the same trend. The major low temperature (10K) feature locating at 3.478eV is assigned as free exciton.
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