Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy

碩士 === 國立彰化師範大學 === 電子工程學系 === 96 === GaN layers has been grown on Si(111) by plasma-assisted molecular beam epitaxy. The effect of thickness, growth rate and III/V ratio of high temperature AlN buffer layer on the GaN samples was investigated. Surface morphology is characterized by scanning electro...

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Bibliographic Details
Main Authors:	Ying-Kai Huang, 黃英凱
Other Authors:	Wei-Li Chen
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/33827701237418119898

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spelling	ndltd-TW-096NCUE54280082015-10-13T11:20:17Z http://ndltd.ncl.edu.tw/handle/33827701237418119898 Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy 利用分子束磊晶法於矽基板上成長氮化鎵之研究 Ying-Kai Huang 黃英凱碩士國立彰化師範大學電子工程學系 96 GaN layers has been grown on Si(111) by plasma-assisted molecular beam epitaxy. The effect of thickness, growth rate and III/V ratio of high temperature AlN buffer layer on the GaN samples was investigated. Surface morphology is characterized by scanning electron microscopy and atomic force microscopy. Crystal quality is assessed by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM). Optical properties are measured by photoluminescence. From the analysis of plan-view TEM, the total dislocation density reduces from 5.28×1010 cm-2 to 3.20×1010 cm-2 when buffer layer growth rate is reduced from 250 nm/hr to 100 nm/hr. HRXRD analysis shows the same trend. The major low temperature (10K) feature locating at 3.478eV is assigned as free exciton. Wei-Li Chen 陳偉立 2008 學位論文 ; thesis 59 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立彰化師範大學 === 電子工程學系 === 96 === GaN layers has been grown on Si(111) by plasma-assisted molecular beam epitaxy. The effect of thickness, growth rate and III/V ratio of high temperature AlN buffer layer on the GaN samples was investigated. Surface morphology is characterized by scanning electron microscopy and atomic force microscopy. Crystal quality is assessed by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM). Optical properties are measured by photoluminescence. From the analysis of plan-view TEM, the total dislocation density reduces from 5.28×1010 cm-2 to 3.20×1010 cm-2 when buffer layer growth rate is reduced from 250 nm/hr to 100 nm/hr. HRXRD analysis shows the same trend. The major low temperature (10K) feature locating at 3.478eV is assigned as free exciton.
author2	Wei-Li Chen
author_facet	Wei-Li Chen Ying-Kai Huang 黃英凱
author	Ying-Kai Huang 黃英凱
spellingShingle	Ying-Kai Huang 黃英凱 Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
author_sort	Ying-Kai Huang
title	Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
title_short	Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
title_full	Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
title_fullStr	Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
title_full_unstemmed	Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy
title_sort	study of gan layer grown on si(111) by plasma assisted molecular beam epitaxy
publishDate	2008
url	http://ndltd.ncl.edu.tw/handle/33827701237418119898
work_keys_str_mv	AT yingkaihuang studyofganlayergrownonsi111byplasmaassistedmolecularbeamepitaxy AT huángyīngkǎi studyofganlayergrownonsi111byplasmaassistedmolecularbeamepitaxy AT yingkaihuang lìyòngfēnzishùlěijīngfǎyúxìjībǎnshàngchéngzhǎngdànhuàjiāzhīyánjiū AT huángyīngkǎi lìyòngfēnzishùlěijīngfǎyúxìjībǎnshàngchéngzhǎngdànhuàjiāzhīyánjiū
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Study of GaN Layer Grown on Si(111) by Plasma Assisted Molecular Beam Epitaxy

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