Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation

碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 96 ===

Bibliographic Details
Main Author: 劉家銘
Other Authors: 羅光耀
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/2gpsz3