Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation

Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation

碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 96 ===

Bibliographic Details
Main Author: 劉家銘
Other Authors: 羅光耀
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/2gpsz3
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spelling ndltd-TW-096NCYU56140092019-05-15T19:28:45Z http://ndltd.ncl.edu.tw/handle/2gpsz3 Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation 利用反射式二次諧波研究磷佈植之矽晶片在不同退火腔壓力的擴散與再結晶 劉家銘 碩士 國立嘉義大學 光電暨固態電子研究所 96 羅光耀 2008 學位論文 ; thesis zh-TW
collection NDLTD
language zh-TW
sources NDLTD
description 碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 96 ===
author2 羅光耀
author_facet 羅光耀
劉家銘
author 劉家銘
spellingShingle 劉家銘
Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation
author_sort 劉家銘
title Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation
title_short Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation
title_full Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation
title_fullStr Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation
title_full_unstemmed Studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of P-implanted Si(111) using reflective second harmonic generation
title_sort studies on the influence of the annealing chamber pressure for the dopant diffusion and recrystalline of p-implanted si(111) using reflective second harmonic generation
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/2gpsz3
work_keys_str_mv AT liújiāmíng studiesontheinfluenceoftheannealingchamberpressureforthedopantdiffusionandrecrystallineofpimplantedsi111usingreflectivesecondharmonicgeneration
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