Magnetron Sputtering La-In-O Films for Gate Dielectrics of MOS Devices
碩士 === 國立東華大學 === 材料科學與工程學系 === 96 === According to the international technology roadmap of semiconductors (ITRS), a gate oxide thickness of less than 1.5 nm is required for uses in the next generation submicrometer metal-oxide-semiconductor field effect transistor (MOSFET) device applications. For...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xjug76 |