Material property and Optical Analysis of InGaP/GaAs and AlGaAs/InGaAs/GaAs Microwave Device
碩士 === 國立東華大學 === 材料科學與工程學系 === 96 === In this thesis, the high-electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) are grown by metalorganic chemical-vapor deposition (MOCVD). These devices have been widely used in wireless communication. Selective wet etching and no...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34374236049507370838 |