Implementation of Temperature-Based Phase Change Memory Model Using Verilog-A

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 96 === Non-volatile memory (NVM) has been very popular for data storage. The continuous scaling of MOSFET is a challenging task due to physical limitations, so developing a new memory device is important. The phase change memory (PCM) has been a promising candidate fo...

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Bibliographic Details
Main Authors: Yi-Bo Liao, 廖翊博
Other Authors: Meng-Hsueh Chiang
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/06799417656002571077