Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress
碩士 === 國立中山大學 === 光電工程研究所 === 96 === In this research, the degradation effect of the low temperature polycrystalline silicon TFTs (LTPS TFTs) under dynamic stress was investigated. The experiment results revealed that the degenerate behaviors of n- and p-type poly-Si were different. In p-channel TFT...
Main Authors: | Han-Po Hsieh, 謝漢博 |
---|---|
Other Authors: | Ting-Chang Chang |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/4336gf |
Similar Items
-
The Study of Low-Temperature Poly-Si TFT''s
by: K. H. Shih, et al.
Published: (2001) -
Study on the Degradation Mechanism of P-type Low Temperature Poly-Si Thin Film Transistors under AC Stress
by: Po-Chun Chan, et al.
Published: (2012) -
Study on Degradation mechanism of Crystallized Laterally Grown Poly-Si TFT under Electrical Stress
by: Tsai-Lun Chao, et al.
Published: (2007) -
The process of high quality Low-temperature poly-Si TFT
by: CHE-HAO LIAO, et al.
Published: (2001) -
Some Preparatory Work for Low Temperature Poly-Si TFT Fabrication .
by: 吳宏基
Published: (2000)