Study of Aluminum content in AlGaN/GaN heterostructures grown by molecular-beam epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 96 === In this thesis, we will discuss that GaN template which was grown on the sapphire by metal organic vapour phase epitaxy (MOVPE). Then GaN epi-layer, intrinsic AlGaN (as spacer) and N-type AlGaN(doping Si) which offers carrier grow by molecular-beam epitaxy. We c...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bwbuq5 |