Characterization of III-V Compound Semiconductor MOS Structures with Titanium Oxide as Gate Oxide
博士 === 國立中山大學 === 電機工程學系研究所 === 96 === Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP)) high-speed devices. The high-k material TiO2 not only has high dielectric constant (k = 35-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/chap68 |