Molecular Beam Epitaxy Grown Al2O3/HfO2 High-κ Dielectrics for Germanium
碩士 === 國立清華大學 === 材料科學工程學系 === 96 === Molecular beam epitaxy (MBE) grown high-k dielectric Al2O3/HfO2 on Ge substrate, without the assistance of interfacial barrier layer, has demonstrated excellent electrical properties and good thermal stability. In-situ MBE-Al2O3 was deposited on HfO2 as a cap la...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93575875950872114953 |