電荷汲引技術對於MOS結構中缺陷分析和調控
碩士 === 國立清華大學 === 材料科學工程學系 === 96 === Atomic-layer-deposited (ALD) high κ dielectric Al2O3 film on In0.53Ga0.47As, using Al(CH3)3 (TMA) and H2O as the precursors, was demonstrated low interfacial density of states (Dit) ~ 2.5x1011 by the charge pumping method for the first time after a dopant activa...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/67720659777846343360 |