砷化鎵及砷化銦鎵n型反轉通道增強型金屬氧化物半導體場效電晶體之研究
博士 === 國立清華大學 === 材料科學工程學系 === 96 === TiN/Ga2O3(Gd2O3)[GGO]/GaAs and /In0.2Ga0.8As MOS diodes after rapid thermal annealing (RTA) to high temperatures of 750�aC exhibit excellent electrical and structural performances: a low leakage current density of 10-8 - 10-9 A/cm2, well-behaved capacitance-volt...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/18574826009096807684 |