Characterization of Gate Leakage Current and Channel Length of Nanometer-scaled MOSFETs
博士 === 國立清華大學 === 電子工程研究所 === 96 === This dissertation contains the DC characterization of nanometer-scaled metal-oxide-semiconductor field-effect-transistors. Two major achievements are obtained: the establishment of a gate leakage current model and accurate parameter extraction from the drain to s...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79489110569213786088 |