The design of high current gain BJT and JFET in 0.25um BCD process

碩士 === 國立清華大學 === 電子工程研究所 === 96 === The BCD process technology combines the BJT, CMOS, and DMOS transistors into the same chip and integrates their advantages. In this thesis, we use the simulation software of process and electricity to analyze the influence of different layout on current gain and...

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Bibliographic Details
Main Authors: Yen-Hung Lin, 林彥宏
Other Authors: Jeng Gong
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/03692752325014653956