Simulation of coupling interference of flash memory

碩士 === 國立清華大學 === 電子工程研究所 === 96 === Flash Memories are used extensively various portable electronic products. The Moore’s law predicts that flash memory cells scale down one generation in two to three years. When IC technology scales to nanometer feature size, flash memories will face many challeng...

Full description

Bibliographic Details
Main Authors: Kun-Huang Yu, 游焜煌
Other Authors: Sheng-Fu Hong
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/49205940728407375810