The Study of Metal (Al)/ Ferroelectric (BiFeO3)/ Insulator (Y2O3)/ Silicon (p-type) MFIS Capacitors and Field Effect Transistors for Nonvolatile Memory Applications
碩士 === 國立清華大學 === 電子工程研究所 === 96 === Al/ BiFeO3 (BFO)/ Y2O3/ p-Si metal ferroelectric insulator semiconductor (MFIS) capacitors and transistors were fabricated. To compare the effect of different annealing temperature, the BFO thin films were annealed at 500 ℃ and 600 ℃. The BFO films annealed at 50...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39761359415736952983 |