The Electrical Properties of Metal-Ferroelectric-Polysilicon-Insulator-Silicon (MFPIS) Capacitors and Field-Effect Transistors using PZT as the ferroelectric layer and Y2O3 as the insulator layer
碩士 === 國立清華大學 === 電子工程研究所 === 96 === Ferroelectric field effect transistors (FeFETs) with a metal/ferroelectric/insulator/silicon (MFIS) structure is a promising candidate for non-volatile random access memory because of its high speed, single-device structure, low power consumption, and non-destruc...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47157591864897137342 |