An Adaptive-Rate Error Correction Scheme for NAND Flash Memory
碩士 === 國立清華大學 === 電機工程學系 === 96 === Flash memory is one of the most widely used cores in current consumer products. Given the high demand of mass storage,multi-level cell (MLC) flash has become a cost-effective solution to increase the storage capacity. However, due to limited program/erase cycles...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42345613403362206330 |