Study of Luminescent Properties of InGaN/AlGaN Ultraviolet Light-Emitting Diode Structures
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 96 === In this thesis, we used the temperature dependent photoluminescence (PL) and X-ray diffraction (XRD) measurements to study the luminescent properties of ultraviolet InGaN/(Al)GaN multiple quantum wells (MQWs) light-emitting diode (LED) structures. The compositi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34985147686481206609 |